CSD16327Q3

$0.67

Description：MOSFET N-CH 25V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84d2d76a7cba Category: Single FETs, MOSFETs Brand: Texas Instruments

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
Rds On (Max) @ Id, Vgs：4mOhm @ 24A, 8V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
Vgs (Max)：+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12.5 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (3.3x3.3)
Package / Case：8-PowerTDFN

Download product information

CSD16327Q3

Overview

The CSD16327Q3 is an N-channel enhancement-mode MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 25 V and a continuous drain current of 60 A. The device utilizes an 8-pin SON surface-mount package with dimensions of 3.4 mm x 3.4 mm x 1.1 mm. Key electrical parameters include a maximum on-resistance of 6.5 mΩ, a gate threshold voltage range of 0.9 V to 1.4 V, and a typical gate charge of 6.2 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

NexFET technology designed for high-efficiency power switching applications
Low on-resistance minimizes conduction losses in power stages
Enhanced thermal performance via compact SON package design

Applications

Synchronous buck converters
DC-DC converter output stages
Power management modules

Procurement Notes

Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors. Confirm that the 8-pin SON package configuration matches your PCB footprint requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference the part number CSD16327Q3 against official component databases to validate authenticity and availability status before procurement.

Selection Notes

Select this component for designs requiring low voltage operation with high current handling capabilities. The 25 V rating suits 12 V systems effectively. Consider the 6.5 mΩ Rds(on) for efficiency optimization. The 8-pin SON package offers a compact solution for space-constrained layouts. Evaluate thermal dissipation needs based on the 3 W power dissipation rating and operating temperature limits up to 150 °C.

Part Context

This device belongs to the NexFET family, which focuses on advanced silicon MOSFET technologies for power management. The CSD16327Q3 specifically targets low-voltage, high-current applications. It complements other TI power solutions by providing efficient switching elements. The series emphasizes reduced gate charge and low on-resistance for improved system performance.