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Product Detailed Parameters
- Description：MOSFET N-CH 25V 28A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：2660 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16403Q5A is a single N-channel NexFET power MOSFET from Texas Instruments. It features a 25-V drain-source voltage rating and an ultra-low on-resistance of 3.7 mΩ. The device supports a continuous drain current of 100 A at case temperature and 28 A at ambient temperature. It utilizes an 8-pin VSONP (5x6 mm) surface-mount package. The component operates within a junction temperature range of -55°C to +150°C and is avalanche rated for robust performance in demanding switching applications.
Feature Summary
- Ultra-low gate charge and reverse transfer capacitance for high-speed switching efficiency
- Low thermal resistance design for effective heat dissipation
- Avalanche rated capability for enhanced ruggedness against transient energy events
Applications
- Point-of-load (POL) DC/DC converters
- Synchronous rectification stages
- High-efficiency power supply designs
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity or cut-tape format. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the procurement channel is authorized to guarantee component authenticity and traceability. Check for any recent lifecycle status updates or obsolescence notices before finalizing orders.
Selection Notes
Select this component when low conduction losses are critical due to its 3.7 mΩ Rds(on). Consider the 8-pin VSONP package for space-constrained PCB layouts requiring efficient thermal management. Evaluate the 100 A current rating against peak load requirements. Ensure the 25 V voltage rating provides sufficient headroom for the target application's bus voltage.
Part Context
This part belongs to Texas Instruments' NexFET family, which focuses on advanced silicon technology for power switching. The CSD16403Q5A represents a single-channel enhancement-mode device designed to replace older discrete solutions with higher integration and lower profile packages for modern power electronics.
Replacement Considerations
Direct substitutes may include other TI NexFET devices with similar voltage and current ratings, such as the CSD16403Q5AT. Verify pinout compatibility and thermal characteristics before substitution.
