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Product Detailed Parameters
- Description：MOSFET N-CH 30V 28A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 8V
- Vgs(th) (Max) @ Id：1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3480 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17301Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 30V and a continuous drain current (Id) of 28A at ambient temperature or 100A at case temperature. The device exhibits a maximum Rds(on) of 3mΩ at Vgs=8V. Gate-source voltage limits are -8V to +10V, with a typical gate charge of 19nC. Power dissipation is rated at 3.2W. Operating junction temperature ranges from -55°C to +150°C. The component utilizes an 8-VSONP package.
Feature Summary
- NexFET technology enables low on-resistance for efficient power switching.
- Enhanced thermal performance via exposed pad design in the VSONP-8 package.
- Optimized gate charge characteristics support high-frequency operation.
Applications
- Telecommunications power distribution systems
- Point-of-load DC-DC converter stages
- Synchronous rectification in power supplies
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure ESD handling protocols are followed during assembly due to the sensitive gate structure inherent to MOSFET components.
Selection Notes
Select this component when a 30V rating and low Rds(on) are required for high-current applications. The VSONP-8 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements based on the 3.2W power dissipation rating under expected operating conditions.
Part Context
This part belongs to the CSD17301 series within the NexFET family. It is designed as a silicon-based enhancement mode transistor. The series targets applications requiring robust performance in power management circuits where efficiency and size are critical constraints.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment before replacing the component in existing designs.
