SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CSD17307Q5A is a single N-channel enhancement-mode power MOSFET from the NexFET series, manufactured by Texas Instruments. It features a maximum drain-source voltage of 30 V and an on-resistance of 12.1 mΩ at 4.5 V gate drive. The device is housed in an 8-pin SON (5 mm x 6 mm) surface-mount package. Key electrical parameters include a continuous drain current of 14 A at case temperature and a maximum junction-to-ambient thermal resistance of 52°C/W. Operating temperatures range from -55 °C to +150 °C.
Verify the specific datasheet revision (e.g., Rev. A) against the manufacturer's official documentation to ensure parameter accuracy. Confirm that the 8-VSONP package dimensions match the design footprint requirements. Check for RoHS compliance status as per the latest Texas Instruments product folder information before finalizing procurement specifications.
Select this component when a 30 V N-channel MOSFET with low Rds(on) is required for space-constrained designs. The 8-pin SON package offers a compact solution compared to traditional leaded packages. Ensure the application voltage and current ratings remain within the specified limits of 30 V and 14 A (Ta) respectively to maintain reliability.
This part belongs to the Texas Instruments NexFET family, which focuses on optimizing power density and thermal performance. The CSD17307Q5A is specifically engineered for applications requiring efficient power management in small form factors. It complements other devices in the series by providing a balance between voltage rating and current handling capability in a surface-mount configuration.
Consult the Texas Instruments product selection guide for direct pin-compatible alternatives within the NexFET lineup. Verify that any substitute maintains the same 30 V rating and compatible package dimensions. Cross-reference thermal resistance values to ensure equivalent heat dissipation capabilities.