ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 14A/44A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：10.3mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17308Q3 is a 30 V N-channel NexFET power MOSFET manufactured by Texas Instruments. It features an 8-pin SON (PowerTDFN) surface-mount package with dimensions of 3.4 mm x 3.4 mm and a height of 1.1 mm. The device supports a maximum continuous drain current of 47 A at case temperature and 14 A at ambient temperature, with a maximum on-resistance of 16.5 mΩ. It operates within a junction temperature range of -55 °C to +150 °C and has a typical gate charge of 3.9 nC at 4.5 V.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency in switching applications.
- Features a compact 8-lead PowerTDFN package designed for high-density surface-mount assembly.
- Includes built-in avalanche rating capability for robust operation under transient conditions.
Applications
- DC-DC converter circuits
- Synchronous rectification stages
- Low-voltage power management systems
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number CSD17308Q3 may be supplied in tape-and-reel formats, such as CSD17308Q3T. Confirm that the received component matches the required packaging configuration for your manufacturing process before integration.
Selection Notes
Select this component for designs requiring low conduction losses in 30 V environments. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the threshold requirements to maintain optimal on-resistance performance during operation.
Part Context
This device belongs to the NexFET family from Texas Instruments, which focuses on improving power conversion efficiency. The CSD17308Q3 is part of a broader lineup of N-channel MOSFETs designed for various voltage levels and current capacities within the company's discrete semiconductor portfolio.
Replacement Considerations
Compatible alternatives include CSD17302Q5A, CSD17305Q5A, CSD17306Q5A, and CSD17304Q3. These parts share similar 30 V specifications but may differ in current handling or on-resistance values. Evaluate electrical parameters carefully before substitution.
