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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17313Q2 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and a continuous drain current of 45A. The device exhibits a maximum on-resistance of 8 milliohms at a gate-source voltage of 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes an 8-pin VSONP package.
Feature Summary
- NexFET technology enables low gate charge for efficient switching performance
- Enhanced thermal design supports high power dissipation in compact packages
- Low on-resistance minimizes conduction losses in power applications
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific suffix against the manufacturer datasheet to confirm pinout and electrical tolerances. Ensure ESD precautions are observed during handling due to the sensitive gate structure. Confirm RoHS compliance status with the supplier prior to integration into final assemblies.
Selection Notes
Select this component when a 30V rating and approximately 45A current capacity are required. The low Rds(on) makes it suitable for high-efficiency power stages. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive drive current requirements.
Part Context
This part belongs to the CSD173xx series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-density power conversion applications requiring small footprint solutions. The VSONP package provides superior thermal performance compared to traditional plastic packages.
Replacement Considerations
Consult the official Texas Instruments replacement guide for verified cross-references. Do not substitute with generic equivalents without verifying pin compatibility and thermal characteristics.
