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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta), 17W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17313Q2T is a 30-V N-channel NexFET power MOSFET from Texas Instruments. It features a single transistor configuration in a surface-mount WSON (DQK) package with 6 pins and dimensions of 2 mm x 2 mm. The device has a maximum continuous drain current of 5 A at ambient temperature and a typical on-resistance of 32 mΩ. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- Compact WSON package for space-constrained designs
Applications
- DC-DC converter output stages
- Load switching applications
- Power management modules
Procurement Notes
Verify the specific ordering suffix, such as 'T', which indicates tape and reel packaging. Confirm the exact package variant matches the design requirements. Ensure the component meets all relevant quality standards required for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring low voltage operation and compact footprint. Consider the thermal performance characteristics relative to the expected load current. Evaluate the gate charge specifications against the driving circuit capabilities to ensure optimal switching performance.
Part Context
This part belongs to the NexFET family of power MOSFETs designed by Texas Instruments. These components are engineered to provide high performance in power conversion systems. The series focuses on minimizing losses while maintaining reliability in various industrial and consumer electronics applications.
Replacement Considerations
Check for compatible parts within the same NexFET series or other manufacturers offering similar 30V N-channel specifications. Verify pinout compatibility and thermal resistance values when substituting.
