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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.1A 3PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：109mOhm @ 500mA, 8A
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.35 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：195 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17381F4 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 30 V drain-source voltage rating and supports a continuous drain current of 3.1 A at ambient temperature. The device exhibits a maximum on-resistance of 109 mΩ at 8 V gate drive. Key electrical characteristics include a gate charge of 1.04 nC, an input capacitance of 195 pF, and a threshold voltage ranging from 650 mV to 1.1 V. The component operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 500 mW.
Feature Summary
- Integrated low gate charge design for efficient switching performance
- Enhanced thermal stability across extended industrial temperature ranges
- Optimized package geometry for high-density surface-mount applications
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix to confirm packaging configuration, as variants such as CSD17381F4T indicate tape-and-reel delivery. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the selected package matches the intended PCB footprint requirements for the 3-PICOSTAR housing.
Selection Notes
Select this component when a compact N-channel solution with low on-resistance is required for 30 V systems. The FemtoFET technology offers reduced gate charge compared to standard MOSFETs, improving efficiency in high-frequency switching environments. Evaluate thermal constraints carefully due to the limited power dissipation rating of the small outline package.
Part Context
This part belongs to the NexFET and FemtoFET families from Texas Instruments, designed for power management applications. It utilizes silicon technology in a 3-XFDFN or 3-PICOSTAR surface-mount package. The series focuses on minimizing footprint while maintaining robust electrical performance for modern electronic designs.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.
