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Product Detailed Parameters
- Description：MOSFET N-CH 30V 2.3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：64mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.7 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：347 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17382F4T is a single N-channel enhancement mode MOSFET from the FemtoFET series by Texas Instruments. It utilizes silicon technology and is housed in a 3-PICOSTAR (1x0.60) surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2.3 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 64 mOhms at 500 mA and 8 V gate drive, with a threshold voltage of 1.2 V. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 500 mW.
Feature Summary
- Integrated into the FemtoFET family for compact footprint requirements
- Optimized low on-resistance for efficient power switching
- Enhanced mode operation for standard logic control compatibility
Applications
- Low voltage synchronous buck converter circuits
- DC-DC step-down power regulation modules
- Portable electronic device power management systems
Procurement Notes
Verify the specific ordering suffix F4T to confirm the reel packaging configuration and tape width specifications required for automated assembly lines. Ensure that the component's moisture sensitivity level and recommended reflow soldering profiles align with your manufacturing process standards to prevent package damage during thermal treatment.
Selection Notes
Select this component when a small outline package is required for space-constrained designs. Compare the 64 mOhm on-resistance against load current requirements to ensure thermal performance remains within acceptable limits. Verify that the 30 V drain-source voltage provides sufficient headroom for the target application's supply rail variations.
Part Context
This part belongs to the CSD17382F4 series, which groups similar N-channel MOSFETs from Texas Instruments. The series focuses on providing high-performance switching capabilities in minimal physical dimensions. The FemtoFET branding indicates a specific design optimization for ultra-small form factor applications compared to standard discrete packages.
Replacement Considerations
Direct substitutes may include other Texas Instruments parts within the CSD17382 series or comparable NexFET devices with matching 30 V ratings and 3-PICOSTAR footprints. Cross-referencing datasheets for pinout compatibility and thermal resistance values is essential before substitution.
