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Product Detailed Parameters
- Description：MOSFET N-CH 30V 24A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1980 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17505Q5A is a 30V N-Channel NexFET Power MOSFET from Texas Instruments. It features an ultralow gate charge (Qg) and low thermal resistance, designed to minimize losses in power conversion applications. The device is avalanche rated and housed in an 8-pin VSONP package. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 24A at Ta and 100A at Tc, and on-resistance of 2.9mΩ at 10V. It operates within a temperature range of -55°C to +150°C with a power dissipation of 3.2W.
Feature Summary
- Ultralow gate charge and gate-drain charge for efficient switching
- Low thermal resistance for effective heat dissipation
- Avalanche rated capability for robust operation under stress
Applications
- Power conversion systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix Q5A to confirm the tape and reel packaging configuration. Ensure compatibility with the 8-VSONP (5x6) footprint during PCB layout. Confirm RoHS compliance and halogen-free status if required by project specifications. Cross-reference the datasheet revision date to ensure parameter accuracy against current manufacturing standards.
Selection Notes
Select this component for applications requiring high efficiency in low-voltage environments. The 30V rating suits systems operating below this threshold. Consider the 2.9mΩ on-resistance for minimizing conduction losses. Evaluate the thermal performance relative to the system's cooling capabilities. Verify that the gate charge requirements align with the driving circuit's capabilities.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. The series focuses on high-performance switching with minimized losses. The CSD17505Q5A specifically targets compact designs due to its small surface-mount package. It complements other devices in the lineup offering similar voltage ratings but different current or resistance characteristics.
Replacement Considerations
Check for direct substitutes within the CSD17505 series or compatible NexFET devices with matching 30V ratings. Verify pinout compatibility with the 8-VSONP package before substitution. Ensure replacement parts meet the same avalanche rating and thermal resistance specifications.
