CSD17551Q5A

Overview

The CSD17551Q5A is an N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a VSONP-8 package with a maximum drain-source voltage of 30 V and a continuous drain current of 13.5 A at 25°C, rising to 48 A under case conditions. The device exhibits a maximum on-resistance of 0.011 Ω. It operates within a temperature range of -55°C to 150°C junction temperature. Key electrical characteristics include a gate charge of 39 nC and a reverse transfer capacitance of 24 pF. The component is avalanche rated with an energy capability of 31.3 mJ.

Feature Summary

• NexFET technology for optimized power performance
• Avalanche rated for robustness in inductive switching applications
• Drain connected to the exposed pad for efficient thermal dissipation

Applications

• DC-DC converter output stages
• Synchronous rectification circuits
• Power management modules

Procurement Notes

Verify the specific ordering suffix Q5A to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status as indicated in official documentation. Check for any recent Product Change Notifications regarding assembly sites or material changes before finalizing procurement plans.

Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for 30V applications. The VSONP-8 package provides a compact footprint suitable for space-constrained designs. Ensure the thermal design accounts for the specified power dissipation limits at the intended operating temperature.

Part Context

This part belongs to the CSD1755x series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion. The series utilizes advanced silicon processes to achieve low Rds(on) and fast switching speeds within small surface-mount packages.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing.