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Product Detailed Parameters
- Description：MOSFET N-CH 30V 7.6A 6SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：468 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-SON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17571Q2 is a 30V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum continuous drain current of 14A and a low on-resistance of 9.4mΩ at 10V gate drive. The device includes avalanche rating capabilities with an energy handling capacity of 24mJ. Packaged in a compact VSONP-8 format, it supports surface-mount installation and operates within a temperature range suitable for general power management applications.
Feature Summary
- NexFET technology optimized for high efficiency and low conduction losses
- Integrated body diode for synchronous rectification or freewheeling
- Rugged avalanche-rated design for enhanced reliability under transient conditions
Applications
- DC-DC converter power stages
- Synchronous buck regulator designs
- General-purpose power switching circuits
Procurement Notes
Verify the specific datasheet revision and package marking to ensure compatibility with your design requirements. Confirm that the component meets all relevant environmental standards required for your final assembly process before integration.
Selection Notes
Select this component when a 30V voltage rating and approximately 14A current capability are required in a small footprint. Consider its low on-resistance for thermal management in space-constrained power supplies.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. These devices are engineered to provide superior performance compared to standard MOSFETs, offering lower gate charge and faster switching speeds for improved system efficiency.
Replacement Considerations
Check for direct pin-compatible alternatives within the same NexFET series if supply constraints exist. Ensure any substitute maintains equivalent voltage, current, and thermal specifications.
