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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.9A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：27mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-SMD, No Lead
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Overview
The CSD17585F5T is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 5.9 A. Its on-resistance is specified at 27 mOhms, with a gate charge of 5.1 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 1.4 W.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- High thermal stability suitable for demanding environments
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Texas Instruments or authorized distributors. Confirm that the PICOSTAR-3 package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives if required for your specific manufacturing process. Cross-reference the part number suffix to confirm tape and reel specifications.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for compact designs. The 30 V rating suits 5 V and 12 V bus systems. Consider the 27 mOhm on-resistance for efficiency targets. The small PICOSTAR-3 package aids in space-constrained layouts. Evaluate thermal management needs based on the 1.4 W power dissipation limit.
Part Context
This part belongs to the CSD17585F5 series of NexFET power MOSFETs. These devices are designed for high-efficiency power conversion. The series offers optimized trade-offs between on-resistance and gate charge. They are intended for use in various consumer and industrial power supply applications requiring reliable switching performance.
