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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4680 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：259W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18502KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 40V drain-source voltage rating and a continuous drain current of 100A at case temperature. The device exhibits a maximum on-resistance of 2.9 milliohms at 10V gate drive. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 259W of power in a TO-220-3 through-hole package.
Feature Summary
- NexFET technology for enhanced efficiency
- Low on-resistance for reduced conduction losses
- Robust thermal performance in TO-220-3 package
Applications
- DC-DC converter modules
- Power distribution networks
- Motor control circuits
Procurement Notes
Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors. Confirm that the TO-220-3 package dimensions and pinout match your PCB footprint requirements. Ensure compliance with RoHS and REACH regulations as specified in the official product documentation before finalizing procurement.
Selection Notes
Select this component when a low-voltage, high-current switching application requires efficient thermal management via through-hole mounting. The 40V rating suits 12V or 24V systems. Evaluate the 2.9mΩ Rds(on) against system loss budgets. Consider the 100A current capability relative to heatsinking constraints and ambient operating temperatures.
Part Context
This part belongs to the CSD185xx series of NexFET power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion applications requiring low on-resistance and robust packaging. The TO-220-3 form factor provides reliable thermal dissipation for medium-to-high power density designs.
Replacement Considerations
Check for direct substitutes within the CSD185xx family with compatible voltage and current ratings. Verify pin compatibility and thermal characteristics before substituting.
