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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18502Q5BT is a NexFET power MOSFET manufactured by Texas Instruments. It features an N-channel configuration housed in an 8-VSON-CLIP package with dimensions of 5x6 mm. The device supports a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 100 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2.3 mΩ at 10 V gate drive, a threshold voltage (Vgs(th)) of 2.2 V, and a total gate charge (Qg) of 33 nC at 4.5 V. Input capacitance is specified as 5070 pF at 20 V. Power dissipation ratings are 3.2 W at ambient temperature and 156 W at case temperature.
Feature Summary
- Utilizes the NexFET technology platform for optimized power performance
- Features a low-profile 8-VSON-CLIP surface-mount package design
- Provides high continuous drain current capability for power switching applications
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific ordering suffix to ensure the correct packaging format matches your assembly requirements. Confirm that the component meets RoHS3 compliance standards for your target market regulations. Cross-reference the manufacturer part number with official distributor catalogs to validate authenticity and current production status before finalizing procurement orders.
Selection Notes
Select this component when a 40 V rating and 100 A current capacity are required within a compact footprint. Ensure the gate drive voltage aligns with the specified thresholds for optimal Rds(on) performance. Evaluate thermal management strategies based on the distinct ambient and case power dissipation limits provided in the datasheet specifications.
Part Context
This component belongs to the CSD18502 series from Texas Instruments, designed for efficient power conversion. It is part of the broader NexFET family, which focuses on reducing conduction and switching losses. The 8-VSON-CLIP package offers improved thermal conductivity compared to standard VSON packages, supporting higher current densities in space-constrained designs.
Replacement Considerations
Consult the official Texas Instruments product selection guide for verified direct replacements or pin-compatible alternatives within the same voltage and current class.
