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Product Detailed Parameters
- Description：CSD18503KCS 40V, N CHANNEL NEXFE
- Series：NexFET™
- Mfr：National Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：188W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18503KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package. The device supports a drain-source voltage of 40 V and a continuous drain current of 100 A. Key electrical parameters include an on-resistance of 6.5 mΩ, a gate charge of 19 nC, and a threshold voltage of 1.9 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 93 W.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- Through-hole mounting for robust integration
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply modules
Procurement Notes
Verify the manufacturer designation as Texas Instruments rather than National Semiconductor, as TI acquired the relevant semiconductor assets. Confirm the specific suffix KCS corresponds to the TO-220-3 tube packaging format. Ensure RoHS compliance documentation is reviewed prior to procurement to meet regulatory standards.
Selection Notes
Select this component for applications requiring high current capacity in a through-hole configuration. The low gate charge facilitates faster switching speeds compared to standard devices. Evaluate thermal management requirements given the 93 W power dissipation capability in the specified package.
Part Context
This part belongs to the CSD1850x series of NexFET power MOSFETs from Texas Instruments. These components are designed for general-purpose power switching applications. The series offers various voltage ratings and package options to suit different design constraints.
Replacement Considerations
Consult official substitution guides for equivalent parts within the same NexFET family or alternative manufacturers offering similar TO-220-3 N-channel MOSFET specifications.
