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Product Detailed Parameters
- Description：MOSFET N-CH 40V 274A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：274A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：250W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The CSD18510KTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 200 A, and a maximum on-resistance (Rds On) of 2 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and has a gate charge (Qg) of 153 nC. It supports an enhancement mode configuration with rise and fall times of 8 ns. The component is rated for a power dissipation (Pd) of 250 W and functions within a temperature range of -55 °C to +175 °C.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance capability for reduced conduction losses
- Enhanced thermal performance suitable for high-power density designs
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification in power supplies
Procurement Notes
Verify the specific ordering suffix and packaging type against the manufacturer's official datasheet to ensure compatibility with automated assembly processes. Confirm RoHS compliance status and REACH SVHC declarations prior to integration into final products. Ensure that the selected package variant matches the intended PCB footprint and thermal management requirements.
Selection Notes
Select this component based on the required 40 V voltage rating and 200 A current handling capacity. Evaluate the 2 mOhm on-resistance against system efficiency targets and thermal constraints. Consider the D2PAK-3 package dimensions for board space limitations and verify that the gate charge characteristics align with the driving circuit's capabilities for optimal switching performance.
Part Context
This part belongs to the CSD18510 series of NexFET power MOSFETs from Texas Instruments. These devices are engineered to provide superior performance compared to traditional planar MOSFETs, offering lower on-resistance and faster switching speeds. The series is widely used in modern power electronics where efficiency and size reduction are critical design parameters.
Replacement Considerations
Consult the official Texas Instruments substitution guide or cross-reference tools for verified equivalent parts. Ensure any substitute maintains identical pinout, voltage ratings, and thermal characteristics to avoid redesigning the PCB layout or thermal interface.
