ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 194A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：194A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：188W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The CSD18511KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package with the case connected to the drain. The device supports a drain-source voltage of 40 V and delivers a continuous drain current of 194 A. Its on-resistance is specified at 3.2 mΩ, with a gate threshold voltage of 1.5 V and total gate charge of 64 nC. Power dissipation reaches 188 W, operating within a temperature range of -55°C to +175°C.
Feature Summary
- NexFET technology for enhanced power efficiency
- Avalanche rated capability for robust operation
- Integrated body diode for switching applications
Applications
- DC-DC converters
- Motor control circuits
- Power management systems
Procurement Notes
Verify the specific suffix KCS against official Texas Instruments documentation to confirm the TO-220-3 through-hole packaging configuration. Ensure that the requested component matches the exact part number to avoid confusion with surface-mount variants or different voltage ratings within the same series. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a through-hole mounting solution is required for high-current applications up to 194 A. The 40 V rating suits low-voltage DC bus systems. Consider the thermal performance provided by the TO-220-3 package and the 188 W power dissipation capability. Verify that the gate drive requirements align with the 1.5 V threshold and 64 nC gate charge specifications for optimal switching performance.
Part Context
This part belongs to the CSD18511 series of NexFET power MOSFETs from Texas Instruments. These devices are designed for general-purpose power switching applications requiring low on-resistance and high current handling. The series includes various packages, with the KCS suffix specifically denoting the TO-220-3 through-hole variant suitable for board-level integration.
Replacement Considerations
Consult official substitution guides for equivalent NexFET devices. Verify pinout compatibility and electrical parameters such as Rds(on) and Vds before replacing.
