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Product Detailed Parameters
- Description：MOSFET N-CH 40V 159A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：159A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 24A, 4.5V
- Vgs(th) (Max) @ Id：2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5850 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18511Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 40 V and an Id of 100 A. The Rds(on) is 2.7 mOhms at Vgs = 10 V. The device operates within a temperature range of -55 °C to +175 °C. Key electrical parameters include a Qg of 82 nC, Vgs(th) of 1.5 V, and Pd of 104 W. It utilizes a VSONP-8 surface-mount package.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency
- Designed for high-speed switching applications with low gate charge
- Capable of operating at elevated junction temperatures up to 175 °C
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix 'Q5A' against official Texas Instruments documentation to confirm the exact tape-and-reel packaging configuration. Ensure that the VSONP-8 footprint matches your PCB design requirements. Cross-reference the RoHS and REACH compliance status directly from the manufacturer's datasheet before finalizing procurement decisions.
Selection Notes
Select this component when a 40 V N-channel MOSFET with a 100 A continuous drain current capability is required in a compact surface-mount form factor. The 2.7 mOhms on-resistance makes it suitable for low-loss power conversion. Consider the 82 nC gate charge for driving circuit compatibility in high-frequency switching environments.
Part Context
This part belongs to the CSD18511 series of NexFET power MOSFETs from Texas Instruments. The series offers various packages including through-hole and surface-mount options. The Q5A designation specifically identifies the VSONP-8 packaged variant within this product family.
Replacement Considerations
Consult the official Texas Instruments substitution guide for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet.
