ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 19A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3840 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD18531Q5A is a 60V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features an 8-VSONP (5x6) surface-mount package. The device supports a continuous drain current of 17A at ambient temperature and 100A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±20V, a threshold voltage of 2.3V at 250µA, and a maximum gate charge of 36nC at 10V. The input capacitance is 2750pF at 30V. On-resistance is specified at 5.9mΩ at 18A and 10V. Power dissipation ratings are 3.2W at ambient and 116W at case temperatures. The operating junction temperature range extends from -55°C to 150°C.
Feature Summary
- NexFET technology optimized for low on-resistance and fast switching performance
- Enhanced thermal design with exposed pad for efficient heat dissipation
- Low gate charge characteristics enabling reduced driver power consumption
Applications
- DC-DC converter circuits
- Power management modules
- Motor control applications
Procurement Notes
Verify the specific suffix 'Q5A' against the manufacturer's official datasheet to confirm pinout and electrical specifications match your design requirements. Ensure the ordering part number corresponds to the correct tape-and-reel or cut-tape quantity as defined in the packaging section of the product documentation. Cross-reference the component marking with the datasheet visual identification guide to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a 60V rating is sufficient for the application, offering lower cost compared to higher voltage variants. The 8-VSONP package is suitable for space-constrained designs requiring robust thermal performance. Evaluate the 5.9mΩ on-resistance against system efficiency targets and compare gate charge values with alternative devices to optimize switching losses in high-frequency operation scenarios.
Part Context
This device belongs to the NexFET family of power MOSFETs from Texas Instruments. It shares the same voltage class and package type with other members like the CSD18533Q5A, but differs in specific on-resistance and current handling capabilities. The series is designed for general-purpose power switching applications requiring high reliability and thermal stability in compact form factors.
Replacement Considerations
Direct substitutes within the same family include CSD18533Q5A and CSD18537NQ5A. Verify that the replacement part meets or exceeds the required on-resistance and current ratings. Ensure the package dimensions and thermal pad configuration remain compatible with the existing PCB footprint.
