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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3840 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18531Q5AT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 60V drain-source voltage rating and operates in an enhancement mode. The device utilizes a VSONP-8 surface-mount package, specifically the 8-VSONP (5x6) configuration. Key electrical characteristics include a continuous drain current of 47A at 25°C and a maximum on-resistance of 11 milliohms when driven at 10V gate-source voltage. The component supports a wide operating temperature range from -55°C to +150°C junction temperature.
Feature Summary
- NexFET technology designed for high efficiency and low conduction losses
- Enhanced switching performance with optimized gate charge characteristics
- Robust thermal management capabilities within a compact footprint
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging configuration during procurement. Confirm RoHS compliance status through official datasheets as regulatory requirements may vary by region. Ensure ordering quantities align with manufacturer standard reel sizes to avoid non-standard handling fees or availability issues.
Selection Notes
Select this component for designs requiring a balance between low on-resistance and small physical size. Evaluate thermal dissipation requirements against the specified power dissipation limits in free air and case conditions. Compare gate charge parameters against driver capabilities to ensure optimal switching speeds without excessive drive current demands.
Part Context
This part belongs to the CSD185xxQ5A series of NexFET Power MOSFETs from Texas Instruments. These devices are engineered for general-purpose power switching applications where space constraints and efficiency are critical. The series offers various voltage and current ratings within the same package family to simplify supply chain management.
Replacement Considerations
Direct substitutes within the same NexFET family include CSD18531Q5A. Other compatible alternatives may include CSD18534Q5AT or CSD18563Q5AT, depending on specific current and resistance requirements.
