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Product Detailed Parameters
- Description：MOSFET N-CH 60V 50A TO220-3
- Series：-
- Mfr：Texas Instruments
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：94W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18537NKCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source voltage rating of 60 V and a continuous drain current capacity of 56 A. Its on-resistance is specified at 14 mOhms, with a gate charge of 14 nC. The component operates within a temperature range of -55°C to +150°C and supports a maximum power dissipation of 94 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Through-hole mounting configuration
- Single channel enhancement mode operation
Applications
- Power management circuits
- Motor control systems
- DC-DC converters
Procurement Notes
Verify the specific suffix 'NKCS' against official Texas Instruments documentation to confirm the exact package variant and tape/reel or tube packaging details. Ensure the requested part matches the required thermal performance specifications for the intended application environment. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.
Selection Notes
Select this component when a robust through-hole solution is required for 60V applications. The TO-220-3 package facilitates effective heat dissipation for high-current scenarios up to 56 A. Consider the 14 mOhm on-resistance for efficiency calculations in low-voltage, high-current designs. Verify that the gate drive requirements align with the specified threshold voltage and total gate charge characteristics.
Part Context
This part belongs to the CSD18537 series of NexFET power MOSFETs from Texas Instruments. The series offers various package options including surface-mount and through-hole configurations. The CSD18537NKCS specifically denotes the through-hole variant designed for applications requiring mechanical stability and efficient thermal management via standard PCB mounting techniques.
Replacement Considerations
Consult official Texas Instruments substitution guides for verified alternatives. Direct replacements must maintain compatible voltage, current, and package specifications.
