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Product Detailed Parameters
- Description：MOSFET N-CH 60V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18537NQ5AT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a VSONP-8 surface-mount package. The device supports a drain-source breakdown voltage of 60 V and delivers a continuous drain current of 50 A. Its on-resistance is specified at 13 mOhms, with a gate charge of 14 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 75 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- Compact VSONP-8 surface-mount packaging
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to confirm exact package and tape-and-reel specifications. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's datasheet before integration into regulated designs.
Selection Notes
Select this component for applications requiring a balance of low on-resistance and compact footprint. The 60V rating suits intermediate voltage levels in power conversion. Evaluate thermal performance based on the 75W dissipation limit and ensure adequate PCB copper area for heat spreading in the VSONP-8 package.
Part Context
This part belongs to the CSD18537NQ5A series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power switching applications. The series offers various package options to suit different thermal and spatial constraints in modern electronic designs.
Replacement Considerations
Consult official Texas Instruments substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.
