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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2.2A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：777 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-SMD, No Lead
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Overview
The CSD18541F5 is a 60V N-Channel FemtoFET MOSFET manufactured by Texas Instruments. It utilizes advanced process technology to achieve extremely low on-resistance and gate charge, optimizing efficiency in high-frequency switching applications. The device features a compact package designed for surface-mount assembly, supporting automated manufacturing processes while maintaining thermal performance suitable for power management systems requiring minimal footprint.
Feature Summary
- Integrated FemtoFET technology for enhanced switching efficiency
- Optimized for high-frequency power conversion applications
- Designed for compact surface-mount packaging solutions
Applications
- Power management integrated circuits
- High-frequency DC-DC converters
- Portable electronic device power stages
Procurement Notes
Verify the specific suffix F5 against official Texas Instruments documentation to confirm pinout and electrical characteristics. Ensure compatibility with existing PCB footprints and thermal design requirements before integration. Cross-reference datasheet revisions to validate current manufacturing status and compliance certifications.
Selection Notes
Select this component when system design demands minimal gate charge and ultra-low on-resistance within a small form factor. Evaluate thermal dissipation capabilities relative to the target application's duty cycle and ambient temperature constraints. Confirm voltage ratings align with maximum supply voltages to prevent breakdown during transient events.
Part Context
This part belongs to the FemtoFET family of N-Channel MOSFETs from Texas Instruments. These devices are engineered to replace traditional discrete MOSFETs in space-constrained designs. The series emphasizes reduced parasitic inductance and capacitance for improved dynamic performance in modern power electronics.
Replacement Considerations
Consult official substitution guides for equivalent 60V N-Channel FemtoFETs such as CSD17381F4 or CSD17585F5 if parameter adjustments are required. Verify package compatibility and thermal resistance values before swapping components.
