SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CSD18543Q3AT is a NexFET Power MOSFET from Texas Instruments, featuring an N-channel configuration in an 8-VSONP (3x3.3) package. It supports a drain-source voltage of 60 V and delivers a continuous drain current of 12 A at ambient temperature or 60 A at case temperature. The device exhibits a maximum on-resistance of 15.6 mΩ at 4.5 V gate drive and 12 A, or 9.9 mΩ at 10 V gate drive. Key electrical parameters include a threshold voltage of 2.7 V max, gate charge of 14.5 nC max at 10 V, and input capacitance of 1150 pF max at 30 V. It operates within a junction temperature range of -55°C to 150°C with a power dissipation rating of 66 W.
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm RoHS3 compliance status as required by project specifications. Ensure the ordering part number matches the exact electrical characteristics documented in the official datasheet to avoid substitution errors.
Select this component for designs requiring low conduction losses under 4.5 V or 10 V drive conditions. Evaluate thermal management requirements based on the 66 W case power dissipation limit. Consider the 8-VSONP footprint for space-constrained PCB layouts where high current density is necessary.
This device belongs to the CSD18543 family of NexFET transistors. It shares core electrical specifications with the CSD18543Q3A variant, differing primarily in packaging format. The Q3AT designation specifically denotes the tape-and-reel configuration suitable for automated assembly processes.
The CSD18543Q3A is a verified alternative offering identical electrical performance in a reel packaging format.