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Product Detailed Parameters
- Description：MOSFET N-CH 80V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12200 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19506KTTT is an N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 200 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2.3 mΩ at 10 V gate drive and 100 A, with a gate charge (Qg) of 156 nC at 10 V. Input capacitance is 12,200 pF at 40 V. It operates within a junction temperature range of -55°C to 175°C and dissipates up to 375 W in a TO-263 (DDPAK-3) package.
Feature Summary
- NexFET technology designed for low conduction losses and fast switching performance
- Avalanche rated capability for robust operation under transient conditions
- Integrated body diode for synchronous rectification applications
Applications
- High-efficiency DC-DC converters
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the specific suffix KTTT corresponds to the reel or cut tape packaging variant required for your assembly line. Confirm RoHS compliance status and moisture sensitivity level during storage planning. Ensure the ordering information matches the exact datasheet revision to avoid pinout or parameter discrepancies.
Selection Notes
Select this component when high current handling near 200 A is required alongside low thermal resistance. The 80 V rating suits intermediate voltage bus architectures. Evaluate gate charge requirements against driver capabilities to optimize switching speed and minimize switching losses in high-frequency topologies.
Part Context
This part belongs to the Texas Instruments NexFET family, which utilizes advanced silicon processes to reduce on-resistance. The TO-263 package provides efficient heat dissipation through the exposed pad connected to the drain terminal, suitable for surface-mount assembly on PCBs requiring high power density.
Replacement Considerations
Cross-reference with CSD19505KTTT for similar 80 V specifications but verify if the lower current rating of 150 A meets system demands. Check CSD19536KTT for higher voltage tolerance at 100 V if circuit conditions require increased headroom.
