CSD19532KTT

Overview

The CSD19532KTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 200 A at 25°C ambient temperature. Its maximum on-resistance is 5.6 mΩ, with a gate charge of 44 nC. Power dissipation reaches 250 W at case temperature. Operating temperatures range from -55°C to +175°C junction temperature.

Feature Summary

• NexFET technology for enhanced switching performance
• Avalanche rated capability for robust operation
• Low thermal resistance design for efficient heat dissipation

Applications

• DC-DC converter modules
• Power factor correction circuits
• Motor control systems

Procurement Notes

Verify the specific suffix KTT against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS and REACH requirements as stated in the product documentation. Confirm moisture sensitivity level handling procedures during assembly to prevent damage.

Selection Notes

Select this component for high-current applications requiring low conduction losses within a 100 V rating. Compare on-resistance and gate charge values against alternative packages to optimize thermal management and drive circuit complexity. Validate that the TO-263-3 footprint matches the target PCB layout constraints.

Part Context

This part belongs to the CSD19532 series of NexFET power MOSFETs. It shares functional similarities with other devices in the family but differs in packaging and specific electrical parameters. The KTT suffix indicates a specific reel configuration distinct from tube-packaged variants like the Q5BT.

Replacement Considerations

Direct substitutes include CSD19532Q5B for different packaging needs. Verify pinout compatibility and thermal characteristics before swapping.