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Product Detailed Parameters
- Description：MOSFET N-CH 100V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5060 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19532KTTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. The device supports a drain-source voltage of 100 V and delivers a continuous drain current of 200 A at 25°C. Its maximum on-resistance is 5.6 mΩ, with a gate charge of 44 nC. The component operates within a temperature range of -55°C to +175°C and handles up to 250 W of power dissipation.
Feature Summary
- NexFET technology designed for high-efficiency switching applications
- Enhanced avalanche ruggedness for robust performance under transient conditions
- Low thermal resistance structure optimized for heat dissipation in power modules
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the specific suffix KTTT against official Texas Instruments documentation to confirm the reel packaging configuration. Ensure compatibility with standard TO-263 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities alongside low conduction losses. The 100 V rating suits intermediate voltage bus architectures. Evaluate thermal management requirements carefully due to the high power dissipation potential inherent in the 200 A current rating and low on-resistance characteristics.
Part Context
This part belongs to the CSD19532 series of NexFET power MOSFETs from Texas Instruments. The series focuses on delivering superior figure-of-merit values for power conversion efficiency. The KTTT designation specifically identifies the tape-and-reel packaging format intended for automated assembly processes.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 100 V rating, 200 A current capacity, and D2PAK-3 package dimensions to ensure mechanical and electrical compatibility.
