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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A TO220-3
- Series：-
- Mfr：Texas Instruments
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1670 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：118W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD19534KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 100 V drain-source voltage rating and supports a continuous drain current of 50 A at case temperature. The device exhibits a maximum on-resistance of 15.1 mΩ at 10 V gate drive. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 63 W at case temperature. The component utilizes an 8-VSONP surface-mount package.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for efficient power conduction
- Enhanced thermal stability for high-power applications
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS and REACH regulatory requirements before integration into final assemblies. Cross-reference the part number with official distributor catalogs to validate authenticity and supply chain integrity.
Selection Notes
Select this component when a low-profile surface-mount solution is required for 100 V applications. The 8-VSONP package suits space-constrained designs. Evaluate thermal management needs based on the 63 W case dissipation rating. Compare on-resistance values against alternative packages to balance conduction losses with footprint constraints.
Part Context
This part belongs to the CSD19534 series of NexFET power MOSFETs from Texas Instruments. The series offers various packaging options including through-hole and surface-mount variants. The KCS suffix specifically denotes the 8-VSONP surface-mount configuration, distinguishing it from other family members like the Q5A or KTT versions.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains the 15.1 mΩ maximum on-resistance and 8-VSONP footprint to ensure mechanical and electrical interchangeability without redesign.
