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Product Detailed Parameters
- Description：MOSFET N-CH 100V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7930 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD19535KTTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 100V drain-source breakdown voltage and a continuous drain current of 200A at ambient temperature. The device utilizes a TO-263 (D2PAK-3) surface-mount package with an exposed thermal pad for efficient heat dissipation, supporting up to 300W power dissipation at case temperature. Key electrical characteristics include a maximum gate-source voltage of ±20V, a threshold voltage ranging from 2.2V to 3.4V, and a maximum gate charge of 98nC at 10V. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- NexFET technology designed to minimize conduction losses while maintaining fast switching performance.
- Low on-resistance capability optimized for high-efficiency power conversion applications.
- Robust avalanche-rated construction capable of handling repetitive avalanche energy events.
Applications
- DC-DC converter modules requiring high current density.
- Synchronous rectification stages in point-of-load (POL) architectures.
- Motor control systems utilizing low-voltage DC sources.
Procurement Notes
Verify the specific suffix 'TT' against the manufacturer's official documentation to confirm the exact reel packaging configuration and tape-and-reel specifications. Ensure that the ordering part number matches the required quantity increments defined by the distributor or manufacturer for reel orders. Cross-reference the datasheet revision date to confirm compliance with current RoHS and REACH standards before finalizing procurement.
Selection Notes
Select this component when a 100V rating is required alongside high continuous current handling capabilities in a surface-mount format. The TO-263 package provides a balance between thermal performance and PCB space efficiency compared to through-hole alternatives. Evaluate the gate charge requirements against the driving circuit's capability to ensure adequate switching speeds without excessive drive losses.
Part Context
This device belongs to the Texas Instruments NexFET family of silicon power MOSFETs. The series is engineered to deliver superior performance metrics relative to traditional discrete solutions. The K-series designation typically indicates specific process optimizations for low on-resistance and fast switching characteristics suitable for modern power management topologies.
Replacement Considerations
Consult the official Texas Instruments product selection guide for verified direct replacements within the CSD195xxKTTT series. Substitutions must match the 100V voltage rating, TO-263 package outline, and equivalent thermal resistance values to maintain system integrity.
