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Product Detailed Parameters
- Description：MOSFET N-CH 100V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
Texas Instruments CSD19536KTTT is an N-channel NexFET power MOSFET housed in a TO-263 (DDPAK-3) surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 200 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 2.4 mΩ at 10 V gate drive with 100 A current. Key electrical parameters include a maximum gate charge of 153 nC at 10 V, input capacitance of 12,000 pF at 50 V, and a threshold voltage of 3.2 V max at 250 µA. It supports a junction temperature range from -55°C to 175°C and offers a thermal dissipation capacity of 375 W at case temperature.
Feature Summary
- NexFET technology provides optimized low on-resistance for high-efficiency power switching applications.
- Robust thermal performance allows for significant power dissipation within the TO-263 package.
- Enhanced switching characteristics support high-frequency operation in synchronous converter topologies.
Applications
- High-power density synchronous buck converters
- Point-of-load (POL) voltage regulation modules
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'TT' against the manufacturer's official datasheet to confirm packaging configuration and tape-and-reel specifications. Ensure compatibility with RoHS3 standards if required by the target assembly process. Cross-reference the part number with authorized distributors to validate authenticity and traceability documentation prior to procurement.
Selection Notes
Select this component when designing circuits requiring a 100 V rating with high current handling capabilities exceeding 150 A. The TO-263 package is suitable for applications needing efficient heat transfer to a PCB copper plane. Consider the 153 nC gate charge for driver selection to ensure adequate switching speed without excessive drive losses.
Part Context
The CSD19536KTTT belongs to Texas Instruments' NexFET family, which integrates advanced silicon technologies to minimize conduction and switching losses. This series is engineered specifically for high-current DC-DC conversion stages where space constraints and thermal management are critical design factors.
Replacement Considerations
Consult the official TI CSD19536 datasheet for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains equivalent Rds(on), Qg, and thermal resistance values to ensure circuit performance stability.
