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Product Detailed Parameters
- Description：MOSFET N-CH 100V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD19537Q3T is a single N-channel NexFET™ power MOSFET manufactured by Texas Instruments. It features a 100 V drain-source voltage rating and supports a continuous drain current of 50 A at ambient temperature. The device exhibits a maximum on-resistance of 14.5 mΩ at 10 V gate drive. Packaged in an 8-VSON-CLIP (3.3x3.3 mm) surface-mount format, it offers a thermal dissipation capacity of 83 W at the case. Key electrical characteristics include a gate charge of 21 nC at 10 V and input capacitance of 1680 pF at 50 V.
Feature Summary
- NexFET™ technology provides low on-resistance for improved efficiency
- VSON-Clip package design enables enhanced thermal performance
- Optimized gate charge reduces switching losses
- Enhanced avalanche energy capability
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Ensure the component matches the original manufacturer's specifications regarding the VSON-Clip-8 footprint. Confirm RoHS compliance status and lead content exemptions as defined in the official datasheet before integration into production designs.
Selection Notes
Select this component when a compact surface-mount solution with high current handling is required. The 100 V rating suits intermediate bus architectures. Evaluate thermal management requirements based on the 83 W case dissipation limit. Compare gate charge values against driver capabilities to ensure adequate switching speed without excessive loss.
Part Context
This part belongs to the Texas Instruments CSD19537 series of NexFET™ power MOSFETs. The series focuses on delivering high performance in small footprints. The Q3 designation indicates specific electrical parameters within the family. The T suffix denotes the standard tape and reel packaging method used for automated assembly processes.
Replacement Considerations
Consult the official Texas Instruments documentation for verified substitute part numbers. Cross-reference pinouts and thermal pad configurations to ensure mechanical compatibility. Verify that alternative components meet or exceed the 100 V breakdown and 50 A current ratings.
