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Product Detailed Parameters
- Description：MOSFET N-CH 100V 15A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：454 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD19538Q3A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds rating of 100 V and a continuous Id of 14.4 A. The device has an Rds(on) of 61 mOhms at Vgs = 10 V. Gate-source voltage limits are ±20 V, with a threshold voltage (Vgs(th)) of 3.2 V. Total gate charge (Qg) is 4.3 nC. Operating temperature ranges from -55 °C to +150 °C junction temperature. Power dissipation is 2.8 W at ambient temperature. The package is VSONP-8.
Feature Summary
- NexFET technology for optimized switching performance
- Enhancement mode N-channel configuration
- Surface-mount VSONP-8 packaging
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix 'A' against the manufacturer's current datasheet to confirm pinout and electrical parameters match your design requirements. Ensure the ordering code corresponds to the correct tape and reel quantity specified in the official documentation. Cross-reference the RoHS compliance status with the latest regulatory updates before finalizing procurement orders.
Selection Notes
Select this component when a 100 V N-channel MOSFET with low gate charge is required for high-frequency switching applications. The VSONP-8 package offers a compact footprint suitable for space-constrained designs. Compare the 61 mOhm on-resistance against thermal constraints to ensure adequate heat dissipation within the 2.8 W power dissipation limit at the target operating temperature.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. The series focuses on improving efficiency through reduced gate charge and fast switching times. The CSD19538Q3A utilizes silicon technology and is designed for general-purpose power switching tasks requiring reliable performance in compact surface-mount configurations.
Replacement Considerations
Check for direct substitutes like CSD19538Q3AT which shares identical electrical characteristics but may differ in packaging format. Verify compatibility with existing PCB footprints when considering alternative packages such as WSON-FET-6 variants within the same voltage class.
