ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 8V 5A 9DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
Download product information
Overview
The CSD22206WT is an 8-V P-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a DSBGA-9 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 8 V, a continuous drain current (Id) of 5 A, and a maximum on-resistance (Rds(on)) of 9.1 mΩ. The device has a gate-source voltage rating of ±6 V, a threshold voltage (Vgs(th)) of 1.05 V, and a total gate charge (Qg) of 14.6 nC. It exhibits rise and fall times of 17 ns and 45 ns respectively, with a power dissipation capability of 1.7 W.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency in low-voltage applications.
- Provides high-speed switching capabilities with optimized gate charge characteristics.
- Designed for robust thermal performance across a wide operating temperature range.
Applications
- Low-side or high-side load switching in portable devices
- Power management circuits in mobile phones and tablets
- Battery protection and control systems
Procurement Notes
Verify the specific ordering suffix 'T' confirms the reel packaging format required for your assembly line. Ensure the component matches the DSBGA-9 footprint dimensions during PCB layout finalization. Confirm RoHS compliance status through the manufacturer's latest documentation before procurement. Validate that the 8-V rating aligns with your system's maximum supply voltage constraints.
Selection Notes
Select this component when an 8-V P-Channel MOSFET is required for space-constrained designs. The DSBGA-9 package offers a compact solution compared to larger footprints. Consider the 9.1 mΩ on-resistance for efficiency calculations in low-voltage, high-current scenarios. Compare against similar NexFET devices if different voltage ratings or current capacities are needed.
Part Context
This part belongs to Texas Instruments' NexFET family of power MOSFETs, designed for high-efficiency power management. The CSD22206WT specifically targets low-voltage applications requiring fast switching and minimal conduction losses. It complements other components in TI's portfolio for complete power solutions in consumer electronics.
Replacement Considerations
The CSD22206W is the non-tape variant of this component. Verify pinout compatibility and electrical parameters when substituting with other 8-V P-Channel MOSFETs from different manufacturers.
