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Product Detailed Parameters
- Description：MOSFET P-CH 12V 5.4A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：35mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：628 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-SMD, No Lead
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Overview
The CSD23285F5T is a P-channel silicon MOSFET from the FemtoFET family, designed for surface-mount applications. It features a 12V drain-source breakdown voltage and supports a continuous drain current of 5.4A at ambient temperature. The device offers a maximum on-resistance of 35 milliohms at 4.5V gate drive. Key electrical characteristics include a gate charge of 4.2nC and an input capacitance of 628pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a compact 3-PICOSTAR package.
Feature Summary
- Ultra-low gate charge and input capacitance for high-speed switching efficiency
- Enhanced thermal performance via low on-resistance design
- Robust ruggedness with defined avalanche energy ratings
Applications
- DC-DC converter output stages
- Low-side load switches
- Power management circuits in portable devices
Procurement Notes
Verify the specific ordering suffix F5T to confirm the tape-and-reel packaging configuration. Ensure the procurement documentation explicitly references the Texas Instruments FemtoFET series specifications. Cross-reference the manufacturer part number against official distributor catalogs to validate authenticity and technical compliance before finalizing orders.
Selection Notes
Select this component for designs requiring minimal gate drive power and fast switching transitions. The low Qg value reduces driver losses compared to standard MOSFETs. Verify that the system's operating voltage remains below the 12V limit and that the thermal environment supports the specified 500mW power dissipation rating without exceeding the maximum junction temperature.
Part Context
This device belongs to Texas Instruments' FemtoFET lineup, which focuses on minimizing gate charge to improve efficiency in power conversion systems. The 3-PICOSTAR package provides a small footprint suitable for space-constrained consumer electronics and mobile applications where board area is limited.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs with similar 12V ratings and 3-pin SMD packages. Verify pinout compatibility and ensure equivalent or lower Rds(on) values are met. Check datasheets for matching thermal resistance and gate charge specifications to maintain circuit performance.
