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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4A 9DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：26mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：1010 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：9-DSBGA
- Package / Case：9-UFBGA, DSBGA
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Overview
The CSD25202W15 is a single P-channel power MOSFET from Texas Instruments' NexFET family, manufactured using silicon technology. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 4 A at ambient temperature. The device offers a maximum on-resistance of 52 mΩ and operates with a gate-source voltage range of ±6 V. Key electrical parameters include a gate charge of 5.8 nC, an input capacitance of 1010 pF, and a threshold voltage of 750 mV. It is housed in a compact 9-DSBGA package, dissipates up to 500 mW, and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology enables low gate charge and fast switching speeds for improved efficiency.
- Optimized low on-resistance reduces conduction losses in power management applications.
- Small DSBGA footprint facilitates high-density surface-mount assembly.
Applications
- DC/DC converter output stages
- Load switch circuits
- Power management ICs
Procurement Notes
Verify the specific ordering suffix (e.g., T) against the manufacturer's datasheet to ensure correct packaging configuration such as reel or cut tape. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the full part number with official distributor catalogs to validate availability and authenticity.
Selection Notes
Select this component for designs requiring a 20 V P-channel switch with moderate current handling capabilities. Ensure the driving circuit can provide sufficient gate voltage swing relative to the source terminal. Evaluate thermal performance based on the 500 mW power dissipation limit and the thermal characteristics of the 9-DSBGA package under expected operating conditions.
Part Context
This device belongs to the CSD25202W15 series of NexFET power MOSFETs. It represents a single-channel enhancement-mode transistor designed for general-purpose power switching. The product line focuses on balancing low on-resistance with small physical size for portable and space-constrained electronics.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Do not assume functional compatibility with other P-channel MOSFETs without verifying pinout, voltage ratings, and thermal specifications.
