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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.6A 4DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：47mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：478 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DSBGA (1x1)
- Package / Case：4-UFBGA, DSBGA
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Overview
The CSD25213W10 is an N-channel NexFET power MOSFET manufactured by Texas Instruments. It is designed for high-efficiency power switching applications, featuring a low on-resistance and optimized gate charge characteristics to minimize conduction and switching losses. The device utilizes a compact WSON-6 package, which facilitates efficient thermal dissipation and allows for dense PCB layouts in space-constrained designs.
Feature Summary
- NexFET technology provides ultra-low on-resistance and gate charge for enhanced efficiency
- Compact WSON-6 package enables superior thermal performance and small form factor
- Optimized for high-speed switching applications with minimal energy loss
Applications
- DC-DC converters
- Power management modules
- Battery protection circuits
Procurement Notes
Verify the specific suffix 'W10' against the official Texas Instruments datasheet to confirm pinout and electrical specifications. Ensure compatibility with your PCB footprint and thermal requirements. Check for RoHS compliance status as indicated in the manufacturer's documentation before procurement.
Selection Notes
Select this component when low Rds(on) and fast switching speeds are critical for system efficiency. The WSON-6 package is suitable for applications requiring high current density in a small area. Compare total power loss calculations against alternative packages to ensure optimal thermal management for your specific duty cycle.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments, known for advanced silicon processes that reduce resistance and charge. It serves as a key component in modern power electronics, replacing older technologies to improve overall system efficiency and reduce heat generation in portable and industrial devices.
Replacement Considerations
Consult the TI NexFET selection guide for direct replacements with similar voltage ratings and current capabilities. Verify that any substitute maintains the same package dimensions and thermal characteristics to avoid redesigning the PCB layout.
