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Product Detailed Parameters
- Description：MOSFET P-CH 20V 5A 6SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：49mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.4 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-SON
- Package / Case：6-SMD, Flat Leads
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Overview
The CSD25302Q2 is a P-channel NexFET Power MOSFET designed for battery and load management applications. It features an ultralow gate charge (Qg) of 2.6 nC at –4.5V and low thermal resistance in a SON 2mm × 2mm plastic package. The device supports a drain-to-source voltage (VDS) of –20V and continuous drain current (ID) of –5A. On-resistance (RDS(on)) ranges from 39 mΩ to 71 mΩ depending on the gate-to-source voltage (VGS). It is avalanche rated, RoHS compliant, and halogen-free.
Feature Summary
- Ultralow gate charge and gate-drain charge for efficient switching
- Low thermal resistance with excellent heat dissipation characteristics
- Avalanche rated capability for robust operation under transient conditions
- Pb-free terminal plating and halogen-free construction
Applications
- Battery Management Systems
- Load Management Circuits
- Battery Protection Modules
Procurement Notes
Verify that the component matches the specific Q2 package dimensions and pinout configuration required by your PCB layout. Confirm compliance with RoHS and halogen-free standards if mandated by your project specifications. Ensure proper ESD handling procedures are followed during storage and assembly due to limited built-in protection. Validate thermal performance based on your specific board copper area and design constraints.
Selection Notes
Select this component when space-constrained designs require a P-channel MOSFET with minimal footprint and high efficiency. The low gate charge makes it suitable for fast-switching applications where drive power needs to be minimized. Consider the –20V rating and –5A continuous current limits to ensure adequate headroom for your system's peak loads and operating voltages.
Part Context
This device belongs to Texas Instruments' NexFET Power MOSFET family, which focuses on delivering low on-resistance and gate charge in small outline packages. The CSD25302Q2 specifically targets portable and battery-operated devices where size and power efficiency are critical. It complements other TI power management solutions for complete system integration.
Replacement Considerations
No public confirmed substitute part numbers are provided in the datasheet.
FAQ
What is the maximum pulsed drain current for the CSD25302Q2?
The maximum pulsed drain current (IDM) is –20 A at an ambient temperature of 25°C.
Is the CSD25302Q2 suitable for automotive applications?
Texas Instruments products are not designed or intended for automotive applications unless specifically designated as compliant with ISO/TS 16949 requirements. This specific part number does not carry such a designation in the provided documentation.
