CSD25304W1015

$0.55

Description：MOSFET P-CH 20V 3A 6DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3493cae2dc81 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3A 6DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：595 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：750mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-DSBGA (1x1.5)
Package / Case：6-UFBGA, DSBGA

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CSD25304W1015

Overview

The CSD25304W1015 is a P-channel enhancement mode MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 20 V and a continuous drain current of 3 A. The device utilizes a DSBGA surface-mount package with six pins, measuring 1 mm by 1.5 mm. Key electrical parameters include a maximum on-resistance of 92 mΩ, a gate threshold voltage range of 0.55 V to 1.15 V, and a typical gate charge of 3.3 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C with a maximum power dissipation of 750 mW.

Feature Summary

P-channel enhancement mode configuration for high-side switching applications
Low on-resistance design to minimize conduction losses
Compact DSBGA surface-mount footprint for space-constrained layouts

Applications

DC-DC converter load switches
Battery protection circuits
Power management modules

Procurement Notes

Verify the specific manufacturer datasheet for the CSD25304W1015 to confirm final electrical characteristics and mechanical dimensions. Ensure compatibility with the intended PCB footprint and thermal requirements. Check for any specific handling instructions related to the DSBGA package and moisture sensitivity levels before assembly.

Selection Notes

Select this component when a low-voltage, high-current P-channel switch is required in a small form factor. Consider the 20 V rating and 3 A current capacity against the circuit demands. Evaluate the thermal performance given the 750 mW dissipation limit and the small package size for adequate heat sinking or board layout.

Part Context

This part belongs to Texas Instruments' NexFET family of power MOSFETs. The series focuses on providing efficient power switching solutions with optimized on-resistance and fast switching speeds. The CSD25304W1015 specifically targets applications requiring compact packaging and reliable performance in low-voltage environments.