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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：32.5mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.4 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：595 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：750mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
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Overview
The CSD25304W1015T is a P-channel enhancement-mode MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 20 V and a continuous drain current of 3 A. The device utilizes a DSBGA surface-mount package with six pins, measuring 1 mm in length and 1.5 mm in width. Key electrical parameters include a maximum on-resistance of 92 mΩ, a gate threshold voltage range of 0.55 V to 1.15 V, and a typical gate charge of 3.3 nC at 4.5 V. It supports a maximum power dissipation of 750 mW and operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Ultra-thin profile with an extremely small footprint designed for space-constrained applications
- Optimized for low conduction losses through minimized on-resistance characteristics
- Enhanced thermal performance capabilities integrated into the compact package design
Applications
- Power management circuits requiring efficient switching
- Battery protection systems utilizing low-voltage logic control
- DC-DC converter topologies needing compact high-side switches
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging configuration. Confirm that the component meets all relevant RoHS compliance standards required for your target market. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits that demand a balance between minimal physical size and adequate current handling capabilities. The low gate charge facilitates faster switching speeds suitable for modern power management architectures. Ensure the application voltage remains within the 20 V limit to maintain reliable operation under varying thermal conditions.
Part Context
This device belongs to the NexFET family, which focuses on delivering high-performance power solutions in miniature packages. The series emphasizes efficiency improvements through reduced parasitic elements and optimized silicon geometry. It serves as a critical element in portable electronics and industrial control systems where board real estate is limited.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values before implementing any cross-references.
