CSD25404Q3T

Overview

The CSD25404Q3T is a NexFET P-channel power MOSFET manufactured by Texas Instruments. It features a 20V drain-source voltage rating and operates within an ambient temperature range of -55°C to +150°C. The device utilizes a DSBGA-6 package with dimensions of 1.0mm x 1.5mm. Key electrical characteristics include a maximum on-resistance of 9.1mΩ at VGS = -4.5V, a continuous drain current of 3A, and a gate charge of 2.2nC.

Feature Summary

• Ultra-thin profile design for minimal board space consumption
• Optimized for low conduction losses via reduced on-resistance
• Enhanced thermal dissipation capabilities through compact packaging

Applications

• Portable electronic devices requiring efficient power management
• Battery-powered systems needing low standby current
• DC-DC converter circuits in mobile applications

Procurement Notes

Verify the specific suffix 'T' indicates tape and reel packaging configuration when ordering. Confirm that the component meets RoHS compliance standards as per the manufacturer's latest documentation. Ensure the requested quantity aligns with standard reel sizes to avoid cut-tape premiums or minimum order constraints.

Selection Notes

Select this component for applications prioritizing small footprint and high efficiency. The 20V rating suits low-voltage DC bus architectures. Evaluate thermal requirements against the 150°C junction limit. Compare gate charge specifications against drive capability requirements for optimal switching performance.

Part Context

This part belongs to the NexFET family of P-channel MOSFETs from Texas Instruments. These components are engineered for ultra-low on-resistance and minimal gate charge. The series targets portable electronics where size and power efficiency are critical design constraints.

Replacement Considerations

Compatible substitutes include CSD25402Q3A and CSD25310Q2. Verify pinout compatibility and ensure equivalent voltage and current ratings before substitution.