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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.5A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：94mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.42 nC @ 4.5 V
- Vgs (Max)：-12V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD25484F4T is a P-channel enhancement-mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It features a 3-PICOSTAR surface-mount package with dimensions of 1x0.60 mm. The device supports a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.5 A at 25°C. Key electrical parameters include a maximum gate threshold voltage of 1.2 V at 250 µA, a maximum gate charge of 1.42 nC at 4.5 V, and an input capacitance of 230 pF at 10 V. The on-resistance is specified as 94 mΩ at 500 mA and 8 V. It operates within a temperature range of -55°C to 150°C TJ and has a maximum power dissipation of 500 mW.
Feature Summary
- Ultra-small 3-PICOSTAR footprint designed for high-density surface-mount applications.
- Optimized low gate charge characteristics to facilitate efficient switching performance.
- Enhanced thermal stability supporting operation up to 150°C junction temperature.
Applications
- Portable consumer electronics requiring minimal board space.
- Battery-powered devices utilizing low-voltage power management.
- DC-DC converter circuits in compact form factors.
Procurement Notes
Verify the specific ordering suffix to ensure the correct packaging configuration, such as tape and reel or cut tape, matches the assembly requirements. Confirm that the component meets RoHS3 compliance standards if required by the target market regulations. Cross-reference the manufacturer part number against official distributor catalogs to validate authenticity and current production status before finalizing procurement orders.
Selection Notes
Select this component when design constraints demand a P-channel MOSFET with a 20 V rating in an extremely small package. Ensure the application's drive voltage aligns with the specified gate threshold and charge parameters for optimal efficiency. Evaluate the thermal management capabilities of the PCB layout to accommodate the 500 mW power dissipation limit within the restricted surface area of the PICOSTAR package.
Part Context
This device belongs to the FemtoFET family, which focuses on miniaturization for modern portable electronics. It serves as a discrete power switch alternative to integrated solutions where specific voltage and current ratings are required. The technology utilizes silicon planar field-stop architecture to balance conduction losses with switching speed in a compact form factor.
Replacement Considerations
Consult official substitution guides for compatible FemtoFET variants with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternatives from other manufacturers.
