CSD75204W15

Overview

The CSD75204W15 is a dual P-channel NexFET power MOSFET in a 1.5-mm × 1.5-mm wafer level package. It features a drain-to-drain voltage of -20 V and a continuous drain current of -3 A at 25°C case temperature. The on-resistance ranges from 80 mΩ to 100 mΩ at VGS = -4.5V, with a total gate charge of 2.8 nC. Operating junction temperatures span from -55°C to 150°C, and the device supports a maximum power dissipation of 0.7 W.

Feature Summary

• Dual P-Channel Configuration
• Small Footprint Design
• Gate ESD Protection

Applications

• Battery Management
• Battery Protection

Procurement Notes

Verify the specific datasheet revision against the manufacturing date code to ensure parameter consistency. Confirm that the wafer level package dimensions align with the recommended land pattern for the target PCB layout. Ensure proper handling procedures are followed due to limited built-in ESD protection mechanisms inherent to the component design.

Selection Notes

Evaluate thermal resistance requirements based on the copper mounting area available on the printed circuit board. Compare the low profile and small footprint advantages against space-constrained alternatives. Consider the gate charge specifications when designing drive circuits for high-frequency switching applications requiring minimal input capacitance loading.

Part Context

This component belongs to the NexFET family of power MOSFETs designed by Texas Instruments. The series emphasizes ultra-low profile construction combined with excellent thermal characteristics. The technology targets battery-operated devices where physical space limitations restrict the use of traditional surface mount packages.

Replacement Considerations

Check for direct cross-references within the same NexFET product line. Verify pinout compatibility if substituting with other dual P-channel MOSFETs in similar form factors.