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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 6PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFBGA
- Supplier Device Package：6-PicoStar
- Grade：-
- Qualification：-
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Overview
The CSD83325L is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 12 V drain-source breakdown voltage and an 8 A continuous drain current capability. The device exhibits a typical on-resistance of 5.9 mΩ at room temperature, with a gate threshold voltage of 950 mV. Gate charge is specified at 8.4 nC. The component operates within a junction temperature range of -55°C to +150°C and dissipates up to 2.3 W of power. It utilizes a BGA-6 surface-mount package and supports enhancement mode operation.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- NexFET technology optimized for low conduction losses
- Enhancement mode operation with defined gate threshold characteristics
Applications
- Low-voltage DC-DC converter output stages
- Power management circuits in portable electronics
- Load switching applications requiring high efficiency
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, such as reel or cut tape options. Ensure the component matches the required RoHS compliance status and moisture sensitivity level for your assembly process. Cross-reference the manufacturer part number with official distributor catalogs to confirm availability and authenticity before procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with 12 V rating is required. Evaluate the 5.9 mΩ on-resistance against thermal constraints for the target current load. Confirm that the BGA-6 package footprint fits the PCB layout and that the 8 A current rating meets the application's peak and continuous requirements.
Part Context
This device belongs to the CSD83325 series of NexFET power MOSFETs from Texas Instruments. It is designed for applications demanding high efficiency in low-voltage environments. The dual-channel architecture allows for independent control of two switches within a single compact package, reducing board space compared to discrete solutions.
Replacement Considerations
Direct replacements include other 12 V dual N-channel NexFET devices from Texas Instruments, such as the CSD83325LT. Verify pin compatibility and electrical parameters like Rds(on) and Qg when substituting with components from other manufacturers.
