CSD87334Q3D

Overview

The CSD87334Q3D is a dual N-channel NexFET power MOSFET from Texas Instruments, housed in an ultra-small DFN5060-8 package. It features a 30V drain-source voltage rating and a continuous drain current of 29A. The device exhibits a low on-resistance of 1.9mΩ at VGS=10V and 2.2mΩ at VGS=4.5V. Key electrical parameters include a gate charge of 10nC and a threshold voltage ranging from 1.2V to 1.9V. Operating temperatures span from -55°C to +150°C junction temperature, with a maximum power dissipation of 8W.

Feature Summary

• Integrated dual N-channel configuration for synchronous buck applications
• Ultra-low on-resistance optimized for high-efficiency power conversion
• Compact DFN5060-8 footprint designed for space-constrained layouts

Applications

• Synchronous buck converters
• Point-of-load (POL) regulation
• DC/DC converter modules

Procurement Notes

Verify the specific suffix Q3D against official datasheets to confirm tape-and-reel packaging and automotive qualification status. Cross-reference manufacturer part numbers with distributor codes to ensure exact component matching before procurement.

Selection Notes

Select this component for designs requiring compact footprints and high current density. Evaluate thermal performance based on PCB copper area, as power dissipation ratings depend heavily on board layout. Ensure gate drive voltages align with the specified RDS(on) conditions for optimal efficiency.

Part Context

This device belongs to the NexFET family, characterized by advanced silicon technology for reduced conduction losses. It serves as a discrete solution within TI's broader portfolio of power management components, targeting efficient energy conversion in portable and industrial electronics.

Replacement Considerations

Consult official substitution guides for compatible NexFET devices with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternative packages or manufacturers.