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The CSD87335Q3D is a dual N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30 V drain-source voltage rating and supports a continuous drain current of 25 A at 25°C. The device utilizes an 8-LSON (3.3x3.3 mm) surface-mount package with a maximum power dissipation of 6 W. Key electrical parameters include a gate threshold voltage ranging from 0.75 V to 1.9 V, a maximum gate charge of 7.4 nC at 4.5 V, and an input capacitance of 1050 pF at 15 V. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the selected variant matches the required packaging format for automated assembly processes. Cross-reference the component marking with the original equipment manufacturer documentation to prevent counterfeit substitution during sourcing.
Select this component based on its 30 V voltage rating and 25 A current capacity relative to the target load requirements. Evaluate the 7.4 nC gate charge parameter to ensure compatibility with the driving controller's output capability. Confirm that the 8-LSON package dimensions fit within the designated PCB area while meeting thermal management constraints for the intended operating environment.
This component belongs to the NexFET family of power transistors designed for efficient power management solutions. It serves as a discrete alternative to integrated power stages in compact converter designs. The dual-channel architecture allows for synchronized switching operations typical in modern step-down voltage regulator topologies.
Consult the official replacement matrix for verified equivalents. Direct substitutes must maintain identical pin configurations and electrical ratings to ensure circuit compatibility without redesign.