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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 25A 8LSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 15V
- Power - Max：6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：8-LSON (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CSD87335Q3DT is a dual N-channel NexFET power MOSFET from Texas Instruments, housed in an 8-pin LSON-CLIP package. It features a 30V drain-source voltage rating and a continuous drain current of 25A at 25°C. The device offers low on-resistance values of 1.2mΩ and 2.4mΩ for its two channels. Key electrical parameters include a gate threshold voltage range of 750mV to 1V, gate charge between 5.7nC and 10.7nC, and maximum power dissipation of 6W. Operating temperatures span from -55°C to +150°C junction temperature.
Feature Summary
- Dual N-channel configuration optimized for synchronous buck converter applications
- Low thermal resistance design utilizing Clip technology for efficient heat dissipation
- Logic-level gate drive capability supporting standard control voltages
Applications
- Synchronous step-down (buck) converters
- Point-of-load (POL) power regulation modules
- DC-DC controller output stages
Procurement Notes
Verify the specific suffix 'DT' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to integration. Ensure the component matches the required 8-LSON footprint dimensions for PCB layout compatibility.
Selection Notes
Select this component for designs requiring compact form factors with moderate current handling up to 25A. Compare input capacitance and gate charge against competing devices to ensure compatibility with available gate drivers. Validate thermal performance under actual load conditions given the 6W power dissipation limit.
Part Context
This part belongs to the CSD87335Q3D series within Texas Instruments' NexFET portfolio. It shares the same core die and electrical characteristics as the non-tape variant, differing primarily in shipping format. The series targets high-density power management solutions requiring small footprints.
Replacement Considerations
Direct pin-compatible alternatives within the same family include CSD87335Q3D. Verify that any substitute maintains identical Rds(on) specifications and thermal performance metrics to ensure circuit stability without redesign.
