CSD87355Q5D

Overview

The CSD87355Q5D is a dual N-channel NexFET MOSFET array housed in an 8-LSON (5x6 mm) surface-mount package. It features a 30V drain-source breakdown voltage and a maximum power dissipation of 12W. Key electrical parameters include a gate charge of 13.7nC at 4.5V, an input capacitance of 1860pF at 15V, and a gate-source threshold voltage of 1.9V at 250µA. The device operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Dual non-symmetrical N-channel configuration for synchronous applications
• NexFET technology optimized for low gate charge and fast switching
• Compact 8-LSON footprint designed for high-density PCB layouts

Applications

• Synchronous step-down DC-DC converters
• Low-voltage power management circuits
• Point-of-load regulation modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS3 compliance status and moisture sensitivity level requirements prior to procurement to align with assembly process constraints.

Selection Notes

Select this component for designs requiring a compact dual-N-channel solution with a 30V rating. Evaluate thermal performance based on the 12W power dissipation limit and the 8-LSON package's thermal resistance characteristics relative to the target PCB copper area.

Part Context

This part belongs to Texas Instruments' NexFET family of power MOSFETs. It serves as a discrete power block alternative to integrated power stages, offering flexibility in controller selection while maintaining high efficiency in low-voltage, high-current conversion topologies.

Replacement Considerations

Consult official substitution guides for electrically equivalent devices with compatible pinouts and thermal profiles. Verify that any alternative maintains the required 30V Vdss and 8-LSON package dimensions for direct board compatibility.