CSD87355Q5DT

Overview

The CSD87355Q5DT is a dual N-channel NexFET power block MOSFET from Texas Instruments, housed in an 8-LSON (5x6) surface-mount package. It features a drain-source voltage of 30V and a maximum power dissipation of 12W. Key electrical parameters include a gate charge of 13.7nC at 4.5V and an input capacitance of 1860pF at 15V. The device has a threshold voltage of 1.9V max at 250µA and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Dual non-symmetrical N-channel configuration for synchronous applications
• NexFET technology optimized for low switching losses
• Compact 8-LSON surface-mount packaging

Applications

• Synchronous step-down converters
• Power management ICs
• DC-DC conversion modules

Procurement Notes

Verify the specific suffix 'DT' against official Texas Instruments documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles and check for RoHS3 compliance status in the latest datasheet before procurement.

Selection Notes

Select this component for designs requiring a 30V rating and compact footprint. Evaluate thermal performance based on the 12W power dissipation limit and ensure the driving circuit can handle the 13.7nC gate charge efficiently at the target switching frequency.

Part Context

This part belongs to the CSD87355Q5 series of NexFET power blocks. It is commonly used in evaluation modules like the CSD87355Q5DEVM-820 for testing synchronous buck converter designs. The base model number is CSD87355Q5.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Texas Instruments for alternative components with similar voltage and current ratings if this specific part is unavailable.