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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 15A 5PTAB
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15A
- Rds On (Max) @ Id, Vgs：16.3mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：564pF @ 15V
- Power - Max：4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：5-LGA
- Supplier Device Package：5-PTAB (3x2.5)
- Grade：-
- Qualification：-
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Overview
The CSD87381PT is a dual N-channel NexFET Power Block II MOSFET manufactured by Texas Instruments. It features a PTAB-5 surface-mount package and operates with a drain-source breakdown voltage of 30 V. The device supports a continuous drain current of 15 A, with on-resistances specified at 15.7 mOhms and 7 mOhms. Gate-source voltage limits range from -8 V to 8 V, while the threshold voltage spans 1.7 V to 1.9 V. Total gate charge varies between 3.9 nC and 8.9 nC. The component handles a power dissipation of 4 W, functions in enhancement mode, and maintains an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Integrated dual N-channel configuration within a compact PTAB-5 package for space-constrained designs.
- NexFET technology optimized for synchronous buck converter applications with low switching losses.
- Enhanced thermal performance supporting high junction temperatures up to 150 °C.
Applications
- Synchronous buck converters
- Point-of-load (POL) regulation
- DC/DC conversion modules
Procurement Notes
Verify the specific suffix 'PT' against the manufacturer's official documentation to confirm the exact tape-and-reel packaging configuration. Ensure that the ordering part number matches the required quantity per reel as defined in the standard shipping data. Cross-reference the RoHS compliance status directly with the latest product specification sheet before finalizing procurement orders.
Selection Notes
Select this component when a 30 V rating and approximately 15 A continuous current capability are required for synchronous rectification. The dual N-channel architecture simplifies driver design compared to discrete P-channel/N-channel combinations. Evaluate the 15.7 mOhms and 7 mOhms Rds(on) values against the target efficiency requirements and thermal management constraints of the specific PCB layout.
Part Context
This device belongs to the CSD87381P series of NexFET Power Blocks. It represents a second-generation integration strategy combining two MOSFETs into a single footprint. This approach reduces parasitic inductance and improves switching performance relative to traditional discrete solutions in similar voltage and current classes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative devices only through direct electrical parameter comparison and pinout analysis using official datasheets.
